Keisuke Yamane

Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Keisuke Yamane, T. Kobayashi, Yuzo Furukawa et al. · Journal of Crystal Growth · 2008 · 45 citations

Engineering, Materials Engineering, Materials Science +16

Successful natural stress-induced separation of hydride vapor phase epitaxy-grown GaN layers on sapphire substrates

Keisuke Yamane, Masaki Ueno, Hiroshi Furuya et al. · Journal of Crystal Growth · 2012 · 45 citations

Engineering, Materials Engineering, Materials Science +14

Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

Keisuke Yamane, Tsuyoshi Kawai, Yuzo Furukawa et al. · Journal of Crystal Growth · 2010 · 44 citations

Engineering, Materials Engineering, Materials Science +17

High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

Narihito Okada, Hiroyasu Oshita, Keisuke Yamane et al. · Applied Physics Letters · 2011 · 38 citations

Engineering, Materials Engineering, Materials Science +17

Monolithic integration of Si-MOSFET and GaN-LED using Si/SiO₂/GaN-LED wafer

Kazuaki Tsuchiyama, Keisuke Yamane, Shu Utsunomiya et al. · Applied Physics Express · 2016 · 27 citations

Engineering, Electrical Engineering, Materials Science +17