Defect reduction in GaAs and InP grown on planar Si(111) and on patterned Si(001) substrates

Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV

D. E. Aspnes, A. A. Studna · Physical review. B, Condensed matter · 1983 · 3.9K citations

Optical Materials, Engineering, Reflectance Measurements +30

The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

John E. Ayers · Journal of Crystal Growth · 1994 · 471 citations

Materials Science, Dislocation Densities, Engineering +11

Dislocation generation of GaAs on Si in the cooling stage

Masami Tachikawa, Hidefumi Mori · Applied Physics Letters · 1990 · 122 citations

Semiconductors, Hcl-gacl Vapor Phase, Electrical Engineering +12

First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate

Manijeh Razeghi, M. Defour, R. Blondeau et al. · Applied Physics Letters · 1988 · 117 citations

Materials Science, Photonics, Ga0.25in0.75as0.5p0.5-inp Laser +15

Stable cw operation at room temperature of a 1.5-μm wavelength multiple quantum well laser on a Si substrate

Mitsuru Sugo, Hidefumi Mori, Yusuke Sakai et al. · Applied Physics Letters · 1992 · 85 citations

Si Substrate, Quantum Photonics, Engineering +20