Concepedia

Surface analysis of different oriented GaAs substrates annealed under bismuth flow

H. Fitouri, I. Moussa, A. Rebey, B. El Jani

Journal of Crystal Growth · 2006 · 36 citations · 14 references

DOI

Concepts

References

14

Molecular beam epitaxy growth of GaAs1−xBix

S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 451 citations

, , +11

New Semiconductor Alloy GaAs<sub>1-x</sub>Bi<sub>x</sub> Grown by Metal Organic Vapor Phase Epitaxy

Kunishige Oe, Hiroshi Okamoto · Japanese Journal of Applied Physics · 1998 · 214 citations

, , +13

Characteristics of Semiconductor Alloy GaAs<sub>1-<i>x</i></sub>Bi<sub><i>x</i></sub>

Kunishige Oe · Japanese Journal of Applied Physics · 2002 · 158 citations

, , +17

Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy

Masahiro Yoshimoto, Satoshi Murata, Akiyoshi Chayahara et al. · Japanese Journal of Applied Physics · 2003 · 133 citations

, , +9

Surfactant enhanced growth of GaNAs and InGaNAs using bismuth

S. Tixier, M. Adamcyk, Erin C. Young et al. · Journal of Crystal Growth · 2003 · 113 citations

, , +3