Japanese Journal of Applied Physics · 2003 · 133 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCrystal GrowthEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsAlloy SemiconductorsEpitaxial MaterialsEpitaxial Thin-film GrowthHeteroepitaxyLinearityMiscibilityMolecular Beam EpitaxySubstrate Temperature Effects
GaAs1-xBix has been grown at a substrate temperature (Tsub) between 350 and 410°C by molecular beam epitaxy. The relationship between GaBi molar fraction (x) evaluated by Rutherford backscattering spectroscopy and the lattice constant showed good linearity. To achieve Bi incorporation into the epilayer, As flux was adjusted in a limited range on the brink of As shortage on the growing surface. The Bi incorporation was saturated at a large Bi flux, probably due to a low miscibility of Bi with GaAs. The value of x increased up to 4.5% with decreasing Tsub to 350°C.
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Molecular beam epitaxy growth of GaAs1−xBix
S. Tixier, M. Adamcyk, T. Tiedje et al. · Applied Physics Letters · 2003 · 453 citations
Natural Sciences, Materials Engineering, Materials Science +17