Subthreshold and scaling of PtSi Schottky barrier MOSFETs

The physics of semiconductor devices

H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations

Semiconductors, Semiconductor Devices, Electrical Engineering +5

Experimental investigation of a PtSi source and drain field emission transistor

John P. Snyder, C. R. Helms, Yoshio Nishi · Applied Physics Letters · 1995 · 96 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm

Chung-Kuang Huang, W.E. Zhang, C. H. Yang · IEEE Transactions on Electron Devices · 1998 · 72 citations

Device Modeling, Schottky Barrier Mosfet, Electrical Engineering +14

Suppression of leakage current in Schottky barrier metal–oxide–semiconductor field-effect transistors

Laurie E. Calvet, H. Luebben, Mark A. Reed et al. · Journal of Applied Physics · 2002 · 62 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

New structural approach for reducing punchthrough current in deep submicrometre MOSFETs and extending MOSFET scaling

S.A. Hareland, A.F. Tasch, C.M. Maziar · Electronics Letters · 1993 · 25 citations

Semiconductors, Device Modeling, Electrical Engineering +15