Applied Physics Letters · 1999 · 26 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesWafer BondingDark CurrentSi(pin) DetectorsSilicon PhotodetectorsSilicon PhotodiodesThermal Expansion MismatchThermal Expansion StressThermal MismatchWafer-to-wafer Bonding
A method of wafer bonding is demonstrated which significantly reduces the thermal expansion mismatch stress, by removing the substrate before the high temperature anneal, thereby allowing elastic accommodation of the thin device layers. Record low-dark-current Si/InGaAs pin detectors have been realized.
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High gain-bandwidth-product silicon heterointerface photodetector
Aaron R. Hawkins, Weishu Wu, P. Abraham et al. · Applied Physics Letters · 1997 · 113 citations
Silicon heterointerface photodetector
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High-performance InGaAs photodetectors on Si and GaAs substrates
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