H. W. Krautter

Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si

J. Kwo, M. Hong, A. R. Kortan et al. · Journal of Applied Physics · 2001 · 262 citations

Engineering, Materials Engineering, Materials Science +17

Boron contamination of surfaces in silicon microelectronics processing: Characterization and causes

F. A. Stevie, E.P. Martin, P. M. Kahora et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +15

Integration of fluorinated amorphous carbon as low-dielectric constant insulator: Effects of heating and deposition of tantalum nitride

Jane P. Chang, H. W. Krautter, Wancheng Zhu et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 31 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors

B. F. Levine, C. J. Pinzone, S.P. Hui et al. · Applied Physics Letters · 1999 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature-humidity-bias behavior and acceleration factors for nonhermetic uncooled InP-based lasers

John Osenbach, T.L. Evanosky, Navin Chand et al. · Journal of Lightwave Technology · 1997 · 26 citations

Engineering, Electrical Engineering, Materials Science +17