IEEE Journal of Selected Topics in Quantum Electronics · 1997 · 91 citations · 34 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsIntegrated PhotonicsOptoelectronic DevicesPhotodetectorsSemiconductor HeterostructuresSemiconductor LasersWafer BondingDevice FabricationDirect Wafer BondingHeteroepitaxial GrowthIntegrated Photonic DevicesSemiconductor Laser FabricationTunable Photonic DevicesVertical-cavity Surface-emitting LasersWafer-to-wafer Bonding
The direct wafer bonding process has found broad applications in many critical areas including both commercial and state-of-the-art photonic devices and more recently, formation of semiconductor compliant substrates. Using the wafer bonding technology, we have demonstrated 1.3-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs) with a 1-mA continuous-wave (CW) threshold current and 0.83-mA pulsed threshold current. Superior device performance has also been achieved with photodetectors and micromachined tunable devices. Applying the wafer bonding process in a novel way, we have fabricated compliant universal substrates on which largely mismatched (e.g., 15% mismatch) heteroepitaxial layers can be grown defect free.
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Defects in epitaxial multilayers
J. W. Matthews, A. E. Blakeslee · Journal of Crystal Growth · 1974 · 1.5K citations
Extreme selectivity in the lift-off of epitaxial GaAs films
Eli Yablonovitch, T.J. Gmitter, J. P. Harbison et al. · Applied Physics Letters · 1987 · 806 citations · Full text
Dislocation reduction in epitaxial GaAs on Si(100)
R. Fischer, D. Neuman, H. Zabel et al. · Applied Physics Letters · 1986 · 198 citations