C. A. King

Reevaluation of the ftBV/sub ceo/ limit on Si bipolar transistors

K.K. Ng, M. Frei, C. A. King · IEEE Transactions on Electron Devices · 1998 · 40 citations

Engineering, Electrical Engineering, Materials Science +12

Ultralow-dark-current wafer-bonded Si/InGaAs photodetectors

B. F. Levine, C. J. Pinzone, S.P. Hui et al. · Applied Physics Letters · 1999 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

A low dark current and high quantum efficiency monolithic germanium-on-silicon CMOS imager technology for day and night imaging applications

Ingvar Åberg, B. Ackland, John Beach et al. · 2010 · 26 citations

Engineering, Electrical Engineering, Microelectronics +16

20 GHz high performance planar Si/InGaAs <i>p-i-n</i> photodetector

B. F. Levine, Aaron R. Hawkins, S. Hiu et al. · Applied Physics Letters · 1997 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients

B. F. Levine, Aaron R. Hawkins, S. Hiu et al. · Applied Physics Letters · 1997 · 17 citations

Engineering, Electrical Engineering, Materials Science +17