Applied Physics Letters · 1997 · 24 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesOptoelectronic DevicesPhotodetectorsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsCharge TrappingDevice FabricationInternal Quantum EfficiencyP-i-n PhotodetectorsPhotodetectionQuantum EfficiencyRecombination CentersSilicon Photodetectors
Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated and measured. They show high internal quantum efficiency, high speed, record low dark current, and no evidence of charge trapping, recombination centers, or a bandgap discontinuity at the heterointerface.
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High gain-bandwidth-product silicon heterointerface photodetector
Aaron R. Hawkins, Weishu Wu, P. Abraham et al. · Applied Physics Letters · 1997 · 113 citations
Silicon heterointerface photodetector
Aaron R. Hawkins, Thomas E. Reynolds, Derek R. England et al. · Applied Physics Letters · 1996 · 87 citations
High-performance InGaAs photodetectors on Si and GaAs substrates
Felix Ejeckam, C.L. Chua, Z.H. Zhu et al. · Applied Physics Letters · 1995 · 77 citations