Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodes

Hole Compensation Mechanism of P-Type GaN Films

Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Hydrogen in crystalline semiconductors

S. J. Pearton, J. W. Corbett, Tiansheng Shi · Applied Physics A · 1987 · 921 citations

Natural Sciences, Materials Science, Physics +12

Heavily doped <i>p</i>-ZnSe:N grown by molecular beam epitaxy

Jun Qiu, J. M. DePuydt, Hai‐Ping Cheng et al. · Applied Physics Letters · 1991 · 294 citations

Engineering, Materials Engineering, Materials Science +16

Metalorganic vapor phase epitaxy of low-resistivity <i>p</i>-type ZnSe

T. Yasuda, Iwao Mitsuishi, Hiroshi Kukimoto · Applied Physics Letters · 1988 · 208 citations

Engineering, Electrical Engineering, Materials Science +13

Compensation processes in nitrogen doped ZnSe

I. Hauksson, J.R. Simpson, S. Y. Wang et al. · Applied Physics Letters · 1992 · 189 citations

Engineering, Materials Engineering, Materials Science +16