V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Engineering, Materials Engineering, Materials Science +17

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Surface-plasmon-enhanced light emitters based on InGaN quantum wells

Koichi Okamoto, Isamu Niki, Alexander Shvartser et al. · Nature Materials · 2004 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +14

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Japanese Journal of Applied Physics · 2001 · 376 citations

Engineering, Electrical Engineering, Materials Science +17

Formation of V-shaped pits in InGaN/GaN multiquantum wells and bulk InGaN films

Ig-Hyeon Kim, Hyeong-Soo Park, Yong-Jo Park et al. · Applied Physics Letters · 1998 · 208 citations

Engineering, Materials Engineering, Materials Science +17