Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study

Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 924 citations

Engineering, Thick Gan Layers, Optoelectronic Devices +18

High electron mobility transistor based on a GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunction

M. Asif Khan, Amal R. Bhattarai, J. N. Kuznia et al. · Applied Physics Letters · 1993 · 865 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +9

High-Power GaN P-N Junction Blue-Light-Emitting Diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Japanese Journal of Applied Physics · 1991 · 827 citations

Electrical Engineering, Solid-state Lighting, Engineering +13

Metal organic vapour phase epitaxy of GaN and lateral overgrowth

P. Gibart · Reports on Progress in Physics · 2004 · 304 citations

Wide-bandgap Semiconductor, Engineering, High Decomposition Pressure +18

Modeling of threading dislocation reduction in growing GaN layers

S.K. Mathis, L.F. Chen, Glenn E. Beltz et al. · Journal of Crystal Growth · 2001 · 178 citations

Physics, Aluminum Gallium Nitride, Applied Physics +3