A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation

Experimental Behavior of Single-Chip IGBT and COOLMOS Devices Under Repetitive Short-Circuit Conditions

S. Lefebvre, Z. Khatir, Fréderic Saint-Eve · IEEE Transactions on Electron Devices · 2005 · 79 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Failure mechanisms of IGBTs under short-circuit and clamped inductive switching stress

M. Trivedi, K. Shenai · IEEE Transactions on Power Electronics · 1999 · 74 citations

Engineering, Electrical Engineering, Microelectronics +16

Short circuit properties of Trench-/Field-Stop-IGBTs-design aspects for a superior robustness

T. Laska, G. Miller, M. Pfaffenlehner et al. · 2004 · 62 citations

Engineering, Electrical Engineering, Materials Science +15

Failure mechanism of trench IGBT under short-circuit after turn-off

Adel Benmansour, Stéphane Azzopardi, J. C. Martin et al. · Microelectronics Reliability · 2006 · 24 citations

Engineering, Electrical Engineering, Materials Science +14

Failure mechanisms of Trench IGBT under various short-circuit conditions

Adel Benmansour, Stéphane Azzopardi, J. C. Martin et al. · 2007 · 23 citations

Engineering, Electrical Engineering, Materials Science +17