Journal of Applied Physics · 1986 · 32 citations · 15 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsRadiation PhysicsSpectroscopyElectron MicroscopyRadiation Damage In MaterialsTransmission Electron MicroscopyCleavage PlanesCross-sectional MicroscopyIrradiation DamageRadiation DamageRadiation Damage EffectsRadiation Damage MechanismsRadiation EffectsSample Damage Mechanisms
The technique of cross-sectional transmission electron microscopy has been applied to study the nature of the radiation damage in GaAs bombarded with 300 keV protons to total doses of 1015 and 5×1015 protons cm−2. The results indicate that upon annealing at temperatures of 500 °C and above, the precipitated damage becomes visible in the form of hydrogen platelets (i.e., hydrogen-filled edge vacancy loops) on the {110} cleavage planes of GaAs.
15
On diffraction contrast from inclusions
Michael F. Ashby, L. M. Brown · Philosophical magazine · 1963 · 329 citations
Natural Sciences, Materials Engineering, Materials Science +17
Passivation of the dominant deep level (EL2) in GaAs by hydrogen
J. Łagowski, M. Kamińska, J. M. Parsey et al. · Applied Physics Letters · 1982 · 111 citations