A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MOCVD

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of The Electrochemical Society · 1979 · 105 citations

Engineering, Materials Engineering, Materials Science +17

Increase in luminescence efficiency of Al<i>x</i>Ga1−<i>x</i>As grown by organometallic VPE

G. B. Stringfellow, G. Hom · Applied Physics Letters · 1979 · 72 citations

Natural Sciences, Materials Engineering, Materials Science +13

Preparation and properties of Ga&amp;lt;inf&amp;gt;1-x&amp;lt;/inf&amp;gt;Al&amp;lt;inf&amp;gt;x&amp;lt;/inf&amp;gt;As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

Russell D. Dupuis, P.D. Dapkus · IEEE Journal of Quantum Electronics · 1979 · 69 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of heterojunctions for MIS devices with oxygen-doped Al<i>x</i>Ga1−<i>x</i>As on <i>n</i>-type GaAs

H. C. Casey, A. Y. Cho, D. V. Lang et al. · Journal of Applied Physics · 1979 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of oxygen injection during vpe growth of GaAs Films

Lars Palm, H. Bruch, K. H. Bachem et al. · Journal of Electronic Materials · 1979 · 17 citations

Engineering, Electrical Engineering, Materials Science +16