Preparation and properties of Ga<inf>1-x</inf>Al<inf>x</inf>As-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition

Abstract

Recently Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> As-GaAs double-heterostructure lasers having low threshold current densities have been grown by metalorganic chemical vapor deposition. In addition to these conventional double-heterostructure lasers, unique laser structures have been grown, e.g., channel-guide, distributed-Bragg-confinement, and single- and multiple-quantum-well lasers. We describe here the preparation and performance of these devices.