Capacitance-Voltage characteristics of metal-insulator-semiconductor diodes with S passivation and Si interface control layers on GaAs and InP

Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements

R. Castagné, A. Vapaille · Surface Science · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +14

Low-temperature deposition of high-quality silicon dioxide by plasma-enhanced chemical vapor deposition

J. Batey, E. Tierney · Journal of Applied Physics · 1986 · 328 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs <i>p</i> <i>n</i> diodes

M. S. Carpenter, M. R. Melloch, Mark Lundstrom et al. · Applied Physics Letters · 1988 · 192 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Unpinned GaAs MOS capacitors and transistors

S. Tiwari, Steven L. Wright, J. Batey · IEEE Electron Device Letters · 1988 · 155 citations

Engineering, Electrical Engineering, Materials Science +17

Sulfur as a surface passivation for InP

R. Iyer, R. Chang, D. L. Lile · Applied Physics Letters · 1988 · 145 citations

Engineering, Electrical Engineering, Materials Science +17