Applied Physics Letters · 1988 · 64 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor SurfacesEpitaxial MaterialsEpitaxial OverlayersHeteroepitaxyHeterostructure DevicesHeterostructure TransistorsHeterostructuresMolecular Beam EpitaxyReflection High-energy Electron Diffraction
Epitaxial GaAs/NiAl/GaAs heterostructures consisting of buried NiAl layers and GaAs overlayers that are monocrystalline and well aligned have been fabricated by a combination of solid-phase reactions and molecular beam epitaxy. The structures have been characterized by reflection high-energy electron diffraction, electron microscopy, and ion channeling. The achievement of these stable and epitaxial buried-metal heterostructures makes possible the fabrication of metal-base and permeable-base transistors, buried interconnects, and buried ground planes.
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T. Sands, V. G. Keramidas, A. J. Yu et al. · Journal of materials research/Pratt's guide to venture capital sources · 1987 · 152 citations
Structure and composition of Ni<i>x</i>GaAs
T. Sands, V. G. Keramidas, J. Washburn et al. · Applied Physics Letters · 1986 · 96 citations