W. K. Chan

Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures

J. P. Harbison, T. Sands, N. Tabatabaie et al. · Applied Physics Letters · 1988 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

Epitaxial growth of GaAs/NiAl/GaAs heterostructures

T. Sands, J. P. Harbison, W. K. Chan et al. · Applied Physics Letters · 1988 · 64 citations

Engineering, Electrical Engineering, Materials Science +17

Stable and shallow PdIn ohmic contacts to <i>n</i>-GaAs

L. C. Wang, X. Z. Wang, S. S. Lau et al. · Applied Physics Letters · 1990 · 56 citations

Engineering, Materials Engineering, Materials Science +17

NiAl/<i>n</i>-GaAs Schottky diodes: Barrier height enhancement by high-temperature annealing

T. Sands, W. K. Chan, C. S. Chang et al. · Applied Physics Letters · 1988 · 49 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial metal(NiAl)-semiconductor(III–V) heterostructures by MBE

T. Sands, J. P. Harbison, N. Tabatabaie et al. · Surface Science · 1990 · 28 citations

Natural Sciences, Materials Science, Physics +14