ANNEALING CHARACTERISTICS OF <i>n</i>-TYPE DOPANTS IN ION-IMPLANTED SILICON

Abstract

Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260–300 keV) in an electrically active form are reported. Above a critical dose, room-temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C.