Applied Physics Letters · 2012 · 17 citations · 20 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsOptoelectronicsLuminescent MaterialsOptical SourcesOptical SpectroscopyOptoelectronic DevicesOptoelectronic MaterialsRare-earth-doped MaterialsDefect Formation EnergyOptical Gain MaterialsRare-earth-doped CrystalsRare-earth-doped Host MaterialsRare-earth-doped Luminescent Materials
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang, J. M. Zavada; Formation energy of optically active Er3+ centers in Er doped GaN. Appl. Phys. Lett. 30 July 2012; 101 (5): 051114. https://doi.org/10.1063/1.4742196 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
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Impurity enhancement of the 1.54-μm Er3+ luminescence in silicon
Jürgen Michel, J. L. Benton, R. F. Ferrante et al. · Journal of Applied Physics · 1991 · 417 citations