Structure and Photoluminescence Study of TiO₂ Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays

Jianwei Liu, Jun Li, A. Sedhain, +2

The Journal of Physical Chemistry C

EngineeringPhoto-electrochemical CellChemistryPhotoelectrochemistryNanoscale Chemistry +16

Nature of deep center emissions in GaN

A. Sedhain, J. Li, J. Y. Lin, +1

Applied Physics Letters

Gallium VacancyEngineeringChemistrySemiconductorsElectronic Devices +14

Electrical and optical properties of p-type InGaN

B. N. Pantha, A. Sedhain, J. Li, +2

Applied Physics Letters

Wide-bandgap SemiconductorOptical MaterialsEngineeringMg-doped Inxga1−xn AlloysOptical Properties +14

The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates

A. Sedhain, L. Du, James H. Edgar, +2

Applied Physics Letters

Aluminium NitrideOptical MaterialsEngineeringBulk Aln CrystalsLuminescent Glass +20

Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN

A. Sedhain, J. Y. Lin, H. X. Jiang

Applied Physics Letters

Aluminium NitrideOptical MaterialsEngineeringAl VacancyChemistry +23

High mobility InN epilayers grown on AlN epilayer templates

Neelam Khan, A. Sedhain, James Li, +2

Applied Physics Letters

Materials ScienceSemiconductorsElectrical EngineeringAln/sapphire TemplatesEngineering +13

Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods

Xiaochen Ji, Shu Ping Lau, S. F. Yu, +7

Applied Physics Letters

Aluminium NitrideMagnetic PropertiesEngineeringUltraviolet PhotoluminescenceMetallic Nanomaterials +16

Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, +1

Applied Physics Letters

Materials ScienceMaterials EngineeringSurface PitsWide-bandgap SemiconductorEngineering +11

Photoluminescence properties of AlN homoepilayers with different orientations

A. Sedhain, Neeraj Nepal, M. L. Nakarmi, +5

Applied Physics Letters

Materials ScienceAluminium NitrideSolid-state LightingEngineeringPhotoluminescence +10

Mg acceptor level in InN epilayers probed by photoluminescence

Neelam Khan, Neeraj Nepal, A. Sedhain, +2

Applied Physics Letters

Mg-doped Inn EpilayersOptical MaterialsEngineeringMg Acceptor LevelPhotoluminescence +9