Japanese Journal of Applied Physics · 1990 · 52 citations · 5 references
Natural SciencesChemistryMaterials ScienceInorganic ChemistrySurface ChemistrySurface ScienceSemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsSurface PhysicsX-ray Photoelectron SpectroscopyInfrared Absorption SpectraInfrared Absorption SpectroscopySiliconSilicon CharacterizationSilicon ChemistrySilicon DioxideSilicon Surface Science
Silicon-hydrogen bonds in silicon oxide films were detected for the first time by applying surface-sensitive X-ray photoelectron spectroscopy and were confirmed by measuring infrared absorption. The areal density of silicon-hydrogen bonds in native oxides formed in a hot solution of HNO 3 is estimated to be nearly 2×10 14 cm -2 , and is much larger than that formed in a solution with a composition of NH 4 OH:H 2 O 2 :H 2 O=1:1.4:4.
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Chemical Bonds at and Near the SiO<sub>2</sub>/Si Interface
Takeo Hattori, Takayuki Igarashi, M. Ohi et al. · Japanese Journal of Applied Physics · 1989 · 37 citations