Attenuated total reflectance study of silicon-rich silicon dioxide films

Abstract

The infrared absorption of Si-rich SiO2 films has been measured using the attenuated total reflection technique. Absorption lines attributed to SiOH, H2O, and SiH groups have been observed in the as-deposited films. The concentrations of the SiOH and H2O impurities were found to be in the low 1021 cm−3 range, and the concentration of the SiH impurity was found to be 1018 cm−3. Following a 1000 C anneal 1019 cm−3 and 1016 cm−3 ranges, respectively.