Comparison of properties of dielectric films deposited by various methods

Abstract

In this review paper, the physico–chemical properties of various dielectric films used on semiconductor devices are compared according to their method of formation or deposition. The insulators which are discussed are silicon dioxide, phosphosilicate glass, silicon nitride, alumina, borosilicate glass, and other silicate glasses. The techniques of formation or deposition are thermal oxidation, CVD and pyrolytic deposition, plasma CVD, dc and rf reactive sputtering, rf sputtering, electron beam evaporation, and fused glass from sedimented powders.