IEEE Electron Device Letters · 1991 · 44 citations · 9 references
Materials ScienceElectrical EngineeringEngineeringMos TransistorPhysicsInterlevel DielectricGlass TransitionBias Temperature InstabilityApplied PhysicsCondensed Matter PhysicsSog FilmsGlass MaterialHot-carrier AgingSilicon On InsulatorMicroelectronicsPolysiloxane Spin-on GlassSemiconductor Device
The effect of introducing a polysilicate or polysiloxane spin-on glass (SOG) as a component of the interlevel dielectric in a multilevel integrated circuit on the hot-carrier aging of the MOS transistor is discussed. It was found that the presence of SOG led to accelerated aging of the MOS transistor: factors of 20 and 5 for silicate and siloxane, respectively. This effect is attributed to water absorbed in the SOG films. a correlation was found for the hot-carrier aging rate and the amount of absorbed water.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
9
Hot-electron-induced MOSFET degradation&#8212;Model, monitor, and improvement
Chenming Hu, Simon Tam, Fu-Chieh Hsu et al. · IEEE Transactions on Electron Devices · 1985 · 1.1K citations