Applied Physics Letters · 1985 · 35 citations · 12 references
Materials ScienceMaterials EngineeringRapid DiffusionIon ImplantationEngineeringSurface ScienceApplied PhysicsRapid Thermal AnnealingSiliceneIon Beam MixingSemiconductor MaterialIon BeamSemiconductor Device FabricationMetal SilicidesSilicon On InsulatorMicroelectronicsMicrostructure
We have shown that uniform, stoichiometric, low-resistivity refractory metal silicides (MoSi2 and WSi2) can be formed by implanting As ions through respective metal films (Mo and W) deposited on Si and rapid thermal annealing. Rapid diffusion of the implanted As ions is observed during the formation of the metal silicides.
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Reaction kinetics of molybdenum thin films on silicon (111) surface
A. Guivarc’h, P Auvray, L. Berthou et al. · Journal of Applied Physics · 1978 · 86 citations
Materials Science, Surface Characterization, Engineering +13
Refractory metal silicide formation induced by As+ implantation
M. Y. Tsai, C. S. Petersson, F. M. d’Heurle et al. · Applied Physics Letters · 1980 · 65 citations