Concepedia

GaN grown on Si(1 1 1) with step-graded AlGaN intermediate layers

Chien‐Chang Huang, Shoou‐Jinn Chang, Ricky W. Chuang, Jia-Ching Lin, Y. C. Cheng, W.J. Lin

Applied Surface Science · 2010 · 29 citations · 14 references

DOI

Concepts

References

14

High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.5K citations · Full text

, , +17

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 330 citations

, , +17

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Anri Watanabe, Tetsuya Takeuchi, Koji Hirosawa et al. · Journal of Crystal Growth · 1993 · 273 citations

, , +13

InGaN-GaN multiquantum-well blue and green light-emitting diodes

Shoou‐Jinn Chang, Wei‐Chih Lai, Y.K. Su et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 253 citations

, , +17

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Shoou‐Jinn Chang, C. H. Kuo, Y.K. Su et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 225 citations

, , +17