A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths

References

Page 1

	Year	Citations
Solid phase immiscibility in GaInN I. H. Ho, G. B. Stringfellow Applied Physics Letters Materials ScienceWide-bandgap SemiconductorEpitaxial GrowthEngineeringCrystalline Defects	1996	1K
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm Yukio Narukawa, Yoichi Kawakami, Mitsuru Funato, Applied Physics Letters PhotonicsPhotoluminescenceEngineeringPhysicsPurple Laser Diode	1997	923
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells Yong‐Hoon Cho, G. H. Gainer, A. J. Fischer, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesCarrier DynamicsTime-resolved Photoluminescence	1998	708
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures Shigefusa F. Chichibu, A. Abare, M. S. Minsky, Applied Physics Letters Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringPiezoelectric FieldWell Thickness	1998	450
Characterization of threading dislocations in GaN epitaxial layers T. Hino, Shigetaka Tomiya, T. Miyajima, Applied Physics Letters Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEngineeringDislocation Interaction	2000	398
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells Yen-Sheng Lin, Kung-Jeng Ma, Chih‐Wei Hsu, Applied Physics Letters Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsElectronic Devices	2000	232
Phase separation in InGaN/GaN multiple quantum wells Matthew D. McCluskey, Lucia Romano, B. S. Krusor, Applied Physics Letters Materials ScienceSemiconductorsDiffraction PeakWide-bandgap SemiconductorEngineering	1998	190
Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures Jie Bai, T. Wang, Shiro Sakai Journal of Applied Physics Wide-bandgap SemiconductorEngineeringQuantum-well ThicknessIngan/gan QuantumNanoelectronics	2000	138
Determination of photoluminescence mechanism in InGaN quantum wells P. Riblet, Hideki Hirayama, Atsuhiro Kinoshita, Applied Physics Letters PhotonicsPhotoluminescenceEngineeringPhysicsApplied Physics	1999	103
Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells Yen-Sheng Lin, Kung‐Jen Ma, Cheng Hsu, Applied Physics Letters EngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIngan/gan Quantum Wells	2002	81

Page 1