Concepedia
Journal of Crystal Growth · 2003 · 11 citations · 12 references
Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsMicrostructure StudyNanoelectronicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceIngan/gan QuantumCategoryiii-v SemiconductorOptoelectronicsCompound Semiconductor
12
Solid phase immiscibility in GaInN
I. H. Ho, G. B. Stringfellow · Applied Physics Letters · 1996 · 1K citations
Materials Science, Wide-bandgap Semiconductor, Epitaxial Growth +14
Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
Yukio Narukawa, Yoichi Kawakami, Mitsuru Funato et al. · Applied Physics Letters · 1997 · 923 citations
Photonics, Photoluminescence, Engineering +12
“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Yong‐Hoon Cho, G. H. Gainer, A. J. Fischer et al. · Applied Physics Letters · 1998 · 708 citations
Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +20
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
Shigefusa F. Chichibu, A. Abare, M. S. Minsky et al. · Applied Physics Letters · 1998 · 450 citations
Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +21
Characterization of threading dislocations in GaN epitaxial layers
T. Hino, Shigetaka Tomiya, T. Miyajima et al. · Applied Physics Letters · 2000 · 398 citations
Materials Science, Materials Engineering, Wide-bandgap Semiconductor +13