Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

Abstract

Carrier lifetimes have been measured for long-wavelength emitting InAs quantum dots (QDs) capped with a thin GaAsSb layer. Above a critical Sb composition, a type-II system is formed, resulting in an increase in the carrier lifetime. The carrier lifetime in a strongly type-II structure is increased by a factor ∼54 in comparison to the lifetime in a type-I structure. In addition, the type-II carrier lifetime varies across the inhomogeneously broadened ground-state emission, while the type-I QD lifetime is invariant.

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