Applied Physics Letters · 1984 · 51 citations · 15 references
Natural SciencesMaterials ScienceElectronic MaterialsMaterials PhysicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsSemiconducting MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand Gap EnergyElectroluminescenceElectronic Density Of StatesEnergy Band GapLow-band-gap SemiconductorsMetastable StatesPersistent LuminescencePhotoluminescence
The persistent photoluminescence quenching effect is shown to occur on the broad 0.68-eV emission commonly present in undoped semi-insulating GaAs bulk materials. The dependence of this persistent emission on below band-gap energy excitation has been measured. The data indicate involvement of the main deep donor EL2 in the radiative mechanism of the 0.68-eV emission. The persistent photoluminescence quenching effect can be explained by the presence of both normal and metastable states of EL2.
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Identification of AsGa antisites in plastically deformed GaAs
E. R. Weber, H. Ennen, U. Kaufmann et al. · Journal of Applied Physics · 1982 · 387 citations
Natural Sciences, Materials Engineering, Materials Science +17
Photoelectric memory effect in GaAs
G. Vincent, D. Bois, A. Chantre · Journal of Applied Physics · 1982 · 302 citations
Engineering, Materials Science, Condensed Matter Physics +16
Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors
J. Łagowski, H. C. Gatos, J. M. Parsey et al. · Applied Physics Letters · 1982 · 279 citations
Intracenter transitions in the dominant deep level (EL2) in GaAs
M. Kamińska, Marek Skowroński, J. Łagowski et al. · Applied Physics Letters · 1983 · 196 citations