Breakdown field in vapor-grown silicon carbide <i>p</i>-<i>n</i> junctions

Abstract

The electrical breakdown of one-sided abrupt p-n junctions in 6H silicon carbide has been investigated. The diodes are produced by vapor growth and mesa etching. Breakdown fields in the range (2–3.7) ×106 V/cm have been observed for p layers with 1017&amp;lt;NA&amp;lt;2×1018 cm−3. These figures tend to support the results of van Opdorp and Vrakking.