Electronics Letters · 1981 · 19 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesBipolar Junction TransistorsHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave Semiconductor DevicesSemiconductor HeterostructuresBreakdown VoltageCurrent GainCutoff FrequencyEtchingHeterojunction Bipolar TransistorsHeterojunction DevicesMicrowave DevicesSelective Etching
A GaAlAs/GaAs heterojunction bipolar transistor has been developed and tested. A double base structure was adopted to facilitate critical selective etching problems. An emitter-collector breakdown voltage VCEO as high as 80 V was achieved. Maximum frequency of oscillationfmax of 850 MHz and a cutoff frequency fT of 1.6 GHz were realised. The current-gain/temperature curve shows that the transistor can be operated at temperatures up to 350°C.
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Theory of a Wide-Gap Emitter for Transistors
H. Kroemer · Proceedings of the IRE · 1957 · 457 citations