Electronics Letters · 1980 · 16 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsCarrier TransportHigh-frequency Semiconductor DevicesMicrowave OscillatorsMicrowave Semiconductor DevicesSemiconductor PhysicsBase ResistanceGaas Microwave Integrated CircuitsGaas OscillatorsHigh-frequency ElectronicsMicrowave DevicesMicrowave TransistorsRadio-frequency DevicesSemiconductor Materials For Microwave Devices
A planar GaAIAs-GaAs bipolar transistor using a new technological processing technique is presented: a p-type diffusion through the emitter layer is used for base contacting, making possible the use of a low Al content emitter, and leading to low values of the base resistance. A transition frequency of 1 GHz and a maximum oscillation frequency of 450 MHz have been measured on large annular geometry devices.
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