The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

Abstract

In this work the electrical properties of Ni and Ni 2 Si contacts on n-type 4H-SiC were correlated to the strong structural changes at the contact/SiC interface upon annealing. We can conclude that only δ-Ni 2 Si grains play a main role in determining electrical transport properties of the Ni-based ohmic contacts to n-SiC. It is presumed that a recrystallization and texturization of δ-Ni 2 Si phase on (0001)SiC-surface during high temperature annealing (> 900°C) contributes to the change of barrier heights, as well as specific contact resistance of contacts.