Pseudomorphic HEMT Devices for Microwave and Millimeter Wave Applications

94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs

K.L. Tan, R.M. Dia, D.C. Streit et al. · IEEE Electron Device Letters · 1990 · 88 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Passivation of GaAs FET's with PECVD silicon nitride films of different stress states

Edward Yi Chang, G. Cibuzar, Kanchan Pande · IEEE Transactions on Electron Devices · 1988 · 61 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

High-power V-band pseudomorphic InGaAs HEMT

K.L. Tan, D.C. Streit, R.M. Dia et al. · IEEE Electron Device Letters · 1991 · 61 citations

Electrical Engineering, Semiconductor Device, Engineering +11

Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMTs from 10 Hz to 18 GHz

R. Plana, L. Escotte, Olivier Llopis et al. · IEEE Transactions on Electron Devices · 1993 · 54 citations

Electrical Engineering, Engineering, Radio Frequency +13

Microwave and mm-wave power amplification using pseudomorphic HEMTs

P.M. Smith, P.C. Chao, J. M. Ballingall et al. · Microwave journal · 1990 · 40 citations

Electrical Engineering, Engineering, Rf Semiconductor +4