Irradiation effects in α-SiC studied via RBS-C, Raman-scattering and surface profiling

Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded Semiconductors

J.E. Smith, M. H. Brodsky, B. L. Crowder et al. · Physical Review Letters · 1971 · 377 citations

Materials Science, Semiconductors, Raman Spectra +12

Energy calibration of the 500 kV heavy ion implanter ionas

M. Uhrmacher, K. Pampus, F.J. Bergmeister et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 346 citations

Electrical Engineering, Energy Harvesting, Engineering +7

Ion implantation effects in silicon carbide

C.J. McHargue, J.M. Williams · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1993 · 187 citations

Materials Engineering, Ion Implantation, Engineering +4

Mechanical property changes in sapphire by nickel ion implantation and their dependence on implantation temperature

Tatsumi Hioki, A. Itoh, M. Ohkubo et al. · Journal of Materials Science · 1986 · 108 citations

Materials Science, Materials Engineering, Nickel Ion Implantation +9

Raman scattering in amorphous Si, Ge and III–V semiconductors

J.E. Smith, M. H. Brodsky, B. L. Crowder et al. · Journal of Non-Crystalline Solids · 1972 · 67 citations

Semiconductors, Engineering, Iii–v Semiconductors +3