Electric-dipole spin-resonance study on extended defects in Czochralski-grown silicon developed by thermal treatment

Abstract

A series of electric-dipole spin-resonance (EDSR) lines, termed Si-SC1 lines, are found to develop in Czochralski-grown Si crystals due to annealing at 650 \ifmmode^\circ\else\textdegree\fi{}C. Some of these lines are very close to Si-2K and Si-3K reported in a previous work. The experimental data are self-consistently explained by use of a model that shows that the EDSR signals are caused by additional electrons trapped by long quasi-one-dimensional defects lying along the 〈110〉 directions. The localization length of the trapped electrons is determined to be of the order of 100 nm and their mobility to be rather high along the defects, suggesting that a quasi-one-dimensional energy band is associated with the straight part of the defect. Si-SC1 centers are attributed to the so-called rodlike defects that are developed in the Czochralski-grown Si crystals due to the above heat treatment.