J. Thibault‐Desseaux

Early stages of oxygen segregation and precipitation in silicon

A. Bourret, J. Thibault‐Desseaux, D. N. Seidman · Journal of Applied Physics · 1984 · 232 citations

Natural Sciences, Materials Engineering, Materials Science +17

Interactions of deformation-induced dislocations with Σ = 9(122) grain boundaries in Si studied by HREM

M. Elkajbaji, J. Thibault‐Desseaux · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1988 · 72 citations

Natural Sciences, Materials Science, Physics +16

Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation

J. Thibault‐Desseaux, Jean‐Luc Putaux, A. Bourret et al. · Journal de physique · 1989 · 26 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +11

Climb of dissociated dislocations in silicon

J. Thibault‐Desseaux, H. O. K. Kirchner, Jean‐Luc Putaux · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1989 · 20 citations

Natural Sciences, Materials Science, Physics +14

Structure observations by high-resolution electron microscopy of Ni-B melt-spun alloys (B<30 at%)

J. A. Ajao, S. Hamar‐Thibault, J. Thibault‐Desseaux · Journal of Materials Science · 1989 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +11