Erbium complexes and defect levels in MBE-grown erbium-doped GaAs and AlGaAs

1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon

H. Ennen, J. Schneider, Gernot S. Pomrenke et al. · Applied Physics Letters · 1983 · 566 citations

Engineering, Materials Engineering, Materials Science +15

Photoluminescence excitation measurements on GaAs:Er grown by molecular-beam epitaxy

H. Ennen, J. Wagner, H. Müller et al. · Journal of Applied Physics · 1987 · 130 citations · Full text

Natural Sciences, Materials Science, Electronic Materials +13

Erbium doping of molecular beam epitaxial GaAs

Robin S. Smith, H. Müller, H. Ennen et al. · Applied Physics Letters · 1987 · 72 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µm

Peter Whitney, Kunihiko Uwai, H. Nakagome et al. · Electronics Letters · 1988 · 48 citations

Engineering, Materials Engineering, Materials Science +16

Donor gettering in GaAs by rare-earth elements

J. Raczyńska, K. Fronc, Jerzy M. Langer et al. · Applied Physics Letters · 1988 · 36 citations

Natural Sciences, Materials Science, Physics +17