D. W. Elsaesser

Statistics

Publications

Citations

100

H-Index

Active since

1987

Affiliations

U.S. Air Force Institute of Technology(Current)

Wright-Patterson Air Force Base

University of Dayton

Hanscom Air Force Base

D. W. Elsaesser is an author at U.S. Air Force Institute of Technology specializing in materials science, semiconductor materials, and electronic materials.

Publications per year

1987–1995

Publications

Enhancement of the Er3+ emissions from AlGaAs:Er codoped with oxygen

Jose E. Colon, D. W. Elsaesser, Y. K. Yeo et al. · Applied Physics Letters · 1993 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +13

Radiation-induced defect introduction rates in semiconductors

P. J. Drevinsky, A. R. Frederickson, D. W. Elsaesser · IEEE Transactions on Nuclear Science · 1994 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Er-related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy

D. W. Elsaesser, Y. K. Yeo, R. L. Hengehold et al. · Journal of Applied Physics · 1995 · 18 citations

Engineering, Materials Engineering, Materials Science +17

Erbium complexes and defect levels in MBE-grown erbium-doped GaAs and AlGaAs

D. W. Elsaesser, Jose E. Colon, Y. K. Yeo et al. · Journal of Crystal Growth · 1993 · 14 citations

Engineering, Materials Engineering, Materials Science +16

Molecular-beam epitaxial growth and characterization of erbium-doped GaAs and AlGaAs

K. R. Evans, E. N. Taylor, C. E. Stutz et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 14 citations

Engineering, Materials Engineering, Materials Science +17

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