C. E. Stutz

Surface charge accumulation of InN films grown by molecular-beam epitaxy

H. J. Lü, W. J. Schaff, L.F. Eastman et al. · Applied Physics Letters · 2003 · 293 citations

Wide-bandgap Semiconductor, Engineering, Charge Transport +18

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense<i>EL</i>2-like band

D. C. Look, D. C. Walters, M. O. Manasreh et al. · Physical review. B, Condensed matter · 1990 · 285 citations

Semiconductors, Low-temperature Molecular-beam-epitaxial Gaas, Molecular-beam-epitaxial Gaas Grown +12

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

K. Ip, M. E. Overberg, Young-Woo Heo et al. · Applied Physics Letters · 2003 · 211 citations

Hydrogen Energy Technology, Engineering, Hydrogen Transition +10

Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an<i>EL</i>2-like defect

M. O. Manasreh, D. C. Look, K. R. Evans et al. · Physical review. B, Condensed matter · 1990 · 142 citations · Full text

Optical Materials, Engineering, Deep Defects +20

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

C.I. Huang, Michael J. Paulus, C. Bozada et al. · Applied Physics Letters · 1987 · 138 citations · Full text