Surface charge accumulation of InN films grown by molecular-beam epitaxy

H. J. Lü, W. J. Schaff, L.F. Eastman, +1

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringCharge TransportSemiconductor DeviceSemiconductors +16

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense<i>EL</i>2-like band

D. C. Look, D. C. Walters, M. O. Manasreh, +3

Physical review. B, Condensed matter

SemiconductorsLow-temperature Molecular-beam-epitaxial GaasMolecular-beam-epitaxial Gaas GrownEngineeringPhysics +10

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

K. Ip, M. E. Overberg, Young-Woo Heo, +7

Applied Physics Letters

Hydrogen Energy TechnologyEngineeringHydrogen TransitionOxide ElectronicsHydrogen Incorporation Depths +8

Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an<i>EL</i>2-like defect

M. O. Manasreh, D. C. Look, K. R. Evans, +1

Physical review. B, Condensed matter

Optical MaterialsEngineeringDeep DefectsOptoelectronic DevicesSemiconductors +18

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

C.I. Huang, Michael J. Paulus, C. Bozada, +5

Applied Physics Letters

Evidence for a Stable Excitonic Ground State in a Spatially Separated Electron-Hole System

J.-P. Cheng, Junichiro Kono, B. D. McCombe, +3

Physical Review Letters

Quantum ScienceCharge ExcitationsEngineeringLocalized Excited StatePhysics +12

Annealing dynamics of molecular-beam epitaxial GaAs grown at 200 °C

D. C. Look, D. C. Walters, G. D. Robinson, +3

Journal of Applied Physics

SemiconductorsSemiconductor TechnologyElectrical EngineeringEpitaxial GrowthEngineering +11

Dislocation-independent mobility in lattice-mismatched epitaxy: application to GaN

D. C. Look, C. E. Stutz, R. J. Molnar, +2

Solid State Communications

PhysicsAluminum Gallium NitrideApplied PhysicsDislocation-independent MobilityGan Power Device +1

Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

Qianghua Xie, J. E. Van Nostrand, Jerram L. Brown, +1

Journal of Applied Physics

Gasb SurfaceEngineeringChemistryMetalloid ContaminationMolecular Beam Epitaxy +19

Alloy scattering in <i>p</i>-type Al<i>x</i>Ga1−<i>x</i>As

D. C. Look, D. K. Lorance, J. R. Sizelove, +3

Journal of Applied Physics

Materials ScienceAlloy ScatteringWide-bandgap SemiconductorAluminium NitrideEngineering +6