Applied Physics Letters · 2004 · 26 citations · 18 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsRadiation PhysicsSemiconductor DevicesAbsorbed DoseRadiation Damage In MaterialsRadiation ResistanceRadiation-resistant MaterialsSemiconductor Device MaterialsSemiconductor ReliabilityContact DegradationContact StabilityContact Stability AnalysisIrradiation DamageRadiation Damage EffectsRadiation EffectsRadiation Effects On ReliabilityRadiation-tolerant Semiconductor Devices
SiC Schottky rectifiers with moderate breakdown voltages of ∼450 V and with either WSiX or Ni rectifying contacts were irradiated with Co-60 γ-rays to doses up to ∼315 Mrad. The Ni/SiC rectifiers show severe reaction of the contact after irradiation at the highest dose, badly degrading the forward current characteristics and increasing the on-state resistance by up to a factor of 6 after irradiation. By sharp contrast, the WSiX/SiC devices show little deterioration of the contact with the same conditions and changes in on-state resistance of <20%. The WSiX contacts appear promising for applications requiring improved contact stability.
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Status and prospects for SiC power MOSFETs
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