Doping behavior of sulfur during growth of GaAs from the vapor phase

The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP

C. D. Thurmond · Journal of The Electrochemical Society · 1975 · 680 citations

Natural Sciences, Materials Science, Physics +17

The incorporation and characterisation of acceptors in epitaxial GaAs

D.J. Ashen, P. J. Dean, D.T.J. Hurle et al. · Journal of Physics and Chemistry of Solids · 1975 · 560 citations

Engineering, Electrical Engineering, Materials Science +12

Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers

J.V. DiLorenzo · Journal of Crystal Growth · 1972 · 135 citations

Engineering, Electrical Engineering, Materials Science +16

Kinetic aspects in the vapour phase epitaxy of III–V compounds

Don W. Shaw · Journal of Crystal Growth · 1975 · 129 citations

Natural Sciences, Materials Engineering, Materials Science +12

Behavior of selenium in gallium arsenide

L.J. Vieland, I. Kudman · Journal of Physics and Chemistry of Solids · 1963 · 109 citations

Natural Sciences, Chemistry, Analytical Chemistry +8