Single-crystalline Si grown on single-crystalline Gd2O3 by modified solid-phase epitaxy

Frontiers of silicon-on-insulator

G. K. Celler, S. Cristoloveanu · Journal of Applied Physics · 2003 · 679 citations

Engineering, Materials Engineering, Materials Science +17

Density-functional calculation of CeO2 surfaces and prediction of effects of oxygen partial pressure and temperature on stabilities

Yong Jiang, James B. Adams, Mark van Schilfgaarde · The Journal of Chemical Physics · 2005 · 239 citations

Natural Sciences, Materials Science, Physics +17

Electronic transport in nanometre-scale silicon-on-insulator membranes

Pengpeng Zhang, Emma Tevaarwerk, Byoung-Nam Park et al. · Nature · 2006 · 180 citations

Engineering, Materials Engineering, Materials Science +14

Influence of surface reconstruction on the orientation of homoepitaxial silicon films

Randall L. Headrick, B. E. Weir, J. Bevk et al. · Physical Review Letters · 1990 · 62 citations

Natural Sciences, Materials Science, Physics +17

Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

A. Fissel, Dirk Kühne, E. Bugiel et al. · Applied Physics Letters · 2006 · 39 citations

Engineering, Materials Engineering, Materials Science +17