Ultra-shallow junctions formed by quasi-epitaxial growth of boron and phosphorous-doped silicon films at 175 °C by rf-PECVD

A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition

Pere Roca I Cabarrocas, J.B. Chevrier, J. Huc et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 232 citations · Full text

Natural Sciences, Materials Engineering, Physics +15

Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements

Jean‐Paul Kleider, Christophe Longeaud, Monique Gauthier et al. · Applied Physics Letters · 1999 · 55 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Toward a better physical understanding of a-Si:H/c-Si heterojunction solar cells

J. Damon-Lacoste, P. Roca i Cabarrocas · Journal of Applied Physics · 2009 · 45 citations

Natural Sciences, Materials Science, Physics +17

Monitoring and modeling silicon homoepitaxy breakdown with real-time spectroscopic ellipsometry

Charles W. Teplin, Dean H. Levi, E. Iwaniczko et al. · Journal of Applied Physics · 2005 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +17

Silicon CVD deposition for low cost applications in photovoltaics

E. Schmich, N. Schillinger, Stefan Reber · Surface and Coatings Technology · 2007 · 23 citations

Engineering, Materials Engineering, Materials Science +14