A modified horizontal gradient-freeze technique for growth of dislocation-free Si-doped GaAs single crystals

Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratio

W. Walukiewicz, L. Lagowski, L. Jastrzȩbski et al. · Journal of Applied Physics · 1979 · 249 citations

Semiconductors, Room Temperature, Electrical Engineering +10

Impurity effect on grown-in dislocation density of InP and GaAs crystals

Yasuo Seki, H. Watanabe, Junji Matsui · Journal of Applied Physics · 1978 · 232 citations

Gaas Crystals, Impurity Effect, Engineering +18

Hardening of GaAs by solute-vacancy pairs

V. Swaminathan, S. M. Copley · Journal of Applied Physics · 1976 · 34 citations

Engineering, Semiconductor Materials, Semiconductors +16

Growth of GaAs ingots with high free electron concentrations

P.D. Greene · Journal of Crystal Growth · 1980 · 29 citations

Semiconductors, Engineering, Applied Physics +3

Dislocation elimination in THM growth of GaAs

Vincent F.S. Yip, William R. Wilcox · Journal of Crystal Growth · 1976 · 22 citations

Dislocation Elimination, Compound Semiconductor, Applied Physics +1