Evidence of dangling bond electrical activity at the Ge/oxide interface

Abstract

The nature of the defects present at the Ge/oxide interface has been investigated by electrically detected magnetic resonance spectroscopy. In vacuo atomic oxygen exposure has been exploited to generate germanium oxide with variable composition according to the oxidation temperature. Two different kinds of interfacial defects have been identified, which correspond to the Ge dangling bonds and to an oxygen-related defect.