Applied Physics Letters · 2006 · 18 citations · 7 references
Point DefectsEngineeringDefect ToleranceProminent Electron TrapsIon ImplantationIon EmissionSemiconductor TechnologyElectrical EngineeringPhysicsCrystalline DefectsTime-dependent Dielectric BreakdownSingle Event EffectsIndium ImplantationDefect FormationMicroelectronicsApplied PhysicsElectrical CharacterizationN-type GeElectrical Insulation
The authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at EC−0.09eV, EC−0.15eV, and EC−0.30eV, respectively. The authors have found that these defects are different from the point defects introduced by electron irradiation but that they do not involve In. Annealing at 600°C removed all the defects introduced during In implantation but results in a single prominent defect with a level at EC−0.35eV.
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Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
I.D. Hawkins, А. R. Peaker, K. V. Emtsev et al. · Physical Review B · 2004 · 114 citations